Offered in the PowerPAK® SO-8 Single Package, Devices Provide High Vth(min) > 2.5 V and Qgd / Qgs Ratios < 1
Vishay Intertechnology, Inc. (NYSE: VSH) today introduced four new 40 V TrenchFET® Gen IV standard-level n-channel power MOSFETs in the 6.15 mm by 5.15 mm PowerPAK® SO-8 single package. Optimized for the noisy environments of motor control circuits, the Vishay Siliconix SIR5402DP, SIR5404DP, SIR5406DP, and SIR5408DP combine a high minimum gate-source threshold voltage of greater than 2.5 V with Qgd / Qgs ratios of less than 1.
The high minimum gate-source threshold voltage of the devices released today prevents false MOSFET triggering induced by the gate in motor control circuits, while their optimized Qgd / Qgs ratios reduce gate-induced voltage fluctuations and the impact of gate noise. Both characteristics make the devices ideal for providing synchronous rectification and DC/DC conversion in BLDC motors, power tools, drones, and automation systems.
The meet the requirements of specific applications, the SIR5402DP, SIR5404DP, SIR5406DP, and SIR5408DP are available with a range of typical on-resistance values from 0.9 mΩ to 2.5 mΩ at 10 V, and gate charge values from 32.6 nC to 82 nC. The MOSFETs are 100 % RG- and UIS-tested, RoHS-compliant, and halogen-free.
Device Specification Table:
| Part # | SIR5402DP | SIR5404DP | SIR5406DP | SIR5408DP | |
| VDS | 40 | 40 | 40 | 40 | |
| VGS | ± 20 | ± 20 | ± 20 | ± 20 | |
| RDS(on) | @ 10 V (Typ.) | 0.9 mΩ | 1.55 mΩ | 1.9 mΩ | 2.5 mΩ |
| @ 10 V (Max.) | 1.2 mΩ | 1.85 mΩ | 2.5 mΩ | 3.2 mΩ | |
| Qg | 82 | 61.5 | 44 | 32.6 | |
| Qgs | 26 | 20 | 14 | 10.5 | |
| Qgd | 18 | 14.5 | 10.5 | 7.5 | |
| Qgd / Qgs ratio | 0.69 | 0.73 | 0.75 | 0.71 | |
| Vth(min) | 2.5 | 2.5 | 2.5 | 2.5 | |
| Package | PowerPAK® SO-8 single | ||||
Samples and production quantities of the new standard-level MOSFETs are available now, with a lead time of 13 weeks.
