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Navitas Drives High-power, High-reliability, Next-gen Power Semis for AI, EV,Industrial, Solar, and Energy Storage at PCIM2024

PCIM-2024

Leading international exhibition highlightsthe latest gallium nitride (GaN) and silicon carbide (SiC) technologies for the safest, most efficient, most reliable power for fast charging, power conversion and storage, motor drive, and more.

Navitas Semiconductor (Nasdaq: NVTS),the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, invites visitors to experience “Planet Navitas” at PCIM 2024(June 11th-13th) and see how industry-leading GaN and SiC solutions deliver optimal performance in a broad array of fast-growing markets and applications from 20 W to 20 MW.

Now in its 25th year, Nuremberg, Germany’s “Power, Control and Intelligent Motion” (PCIM) serves as the premier international meeting place for industry specialists and is renowned as the leading exhibition for power electronics and its applications.

Aligned with Navitas’ mission to “Electrify Our World™”, the “Planet Navitas” booth invites visitors to discover how next-gen GaN and SiC technology enable the latest solutions for fully-electrified EV transportation, AI data centers, industrial compressors, drives, and robotics plus renewable energy sourcing and storage. Each example highlights end-user benefits such as increased portability, longer range, faster charging, and grid independence, along with a focus on how low-carbon-footprint GaN and SiC technology can save over 6 Gtons/yr CO2 by 2050.

“PCIM is a key event in the power-electronics calendar,” says Alessandro Squeri, Navitas’ senior director for European sales. “Complementary GaNFast and GeneSiC portfolios, with comprehensive, application-specific system design support, accelerate customer time-to-market with sustainable performance advantages. ‘Planet Navitas’ represents the very real, inspiring implementation of GaN & SiC that makes up a $1.6B identified customer pipeline as part of a vast $22B/year market opportunity.”

Major technology updates and releases include GaNSafe™ – the world’s most-protected, mostreliable, and highest-performance GaN power, Gen-4 GaNSense™ Half-Bridge ICs – the most integrated GaN devices, and Gen-3 Fast GeneSiC power FETs – for game-changing motor drive and energy-storage applications.

In addition to the exhibition, PCIM 2024 includes peer-review technical presentations, including:

11th June, 13:00 – 14:30, Hall 10.1

  • “Low-Cost High-Density 300W/20V AC-DC Converter Enabled by GaN Power ICs”- Tom Ribarich, Sr. Director of Strategic Marketing, Navitas Semiconductor
    • A low-cost 300W high-density AC-to-DC converter has been designed and demonstrated to achieve >96% peak efficiency and 270cc. The circuit topologies include a 2-phase interleaved PFC input stage, an LLC DC-DC stage, and a synchronous rectification output stage. The design includes GaN Power ICs and off-the-shelf controllers running at 300kHz. This new design has resulted in a cased power density of 1.1 W/cc.

12th June, 15:30 – 17:00, Foyer

  • Evaluation of SiC Devices for Over 500kHz Application Based on Buck Circuit – Minli Jia, Sr. Staff Applications Engineer, Navitas Semiconductor
    • This paper selects three 1200V SiC devices of similar specifications and different manufacturers for analysis and experimental research and designs a Buck converter with an output power of 3.6kW and a switching frequency of 600kHz. The efficiency and heat of three SiC types were tested under the same working conditions, and the results showed that the SiC with fast turn-off characteristics and low thermal resistance was more suitable for high-frequency converter applications.

PCIM takes place at NürnbergMesse Karl-Schönleben-Str. Messeplatz 1, 90471 Nürnberg, Germany, with the exhibition running from June 11th – 13th, 2024. “Planet Navitas” is featured in Hall 9, booth #544.

To schedule a meeting with the Navitas team, email euro.sales@navitassemi.com

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