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GaN RF power transistors in 10 to 200W ratings

GaN RF power transistors in 10 to 200W ratings_popup

Ampleon has now extended its portfolio of the GaN RF power transistors that are truly based on 0.5 um that is based on the HEMT technology. It will be comprising on the 10,30,50 and the 100 W devices that will be now available for the application use of the C band through the 100 W and the 200 W packages of push and pull. This will lead to final S band. The house will be thermally stable an ceramic for the CLF1G range of application that will be specific in its size weight and power.

Optimizing the best class of the power efficiency this broadband power performance will be available in the electrical models thus the refining designs and boards will be demonstrated.


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