Made using the popular second-generation (G2) silicon (Si) technology.
These dual common cathode power Schottky diodes are an excellent example of the Trench silicon semiconductor structure. Thanks to the use of the second generation (G2) of this technology, the diodes achieve the following parameters:
- favourable VFvoltage drop of 0.63V – 0.95V;
- lower IRreverse current;
- high Tjjunction temperature, up to 150°C.
Dual diodes by WeEn are available in the following packages:
- D2PAK (SMD);
- TO220AB (THT).
TO220 Schottky rectifier diodes & D2PAK package
Dual Schottky rectifier diodes are widely applied in common rectifiers, e.g.: DC/DC converters, switched-mode power supplies, UPS systems – wherever long-term reliability and reduction of switching losses are important.
| Specification | |
| Max. reverse voltage: | 100V |
| Max. forward current: | 20/30/40A |
| Package: | TO220/D2PAK |
| Semiconductor structure: | dual, common cathode |
Text prepared by Transfer Multisort Elektronik Sp. z o.o.
The original source of text: tme.eu
