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Electronics Component

Vishay Intertechnology IGBT Power Modules in Redesigned INT-A-PAK Package

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Built on Trench IGBT Technology, Half-Bridge Devices Offer Choice of Low VCE(ON) or Low Eoff for High-Current Inverter Stages

Vishay Intertechnology, Inc. (NYSE: VSH) today introduced five new half-bridge IGBT power modules in the newly redesigned INT-A-PAK package. Built on Vishay’s Trench IGBT technology, the VS-GT100TS065S, VS-GT150TS065S, VS-GT200TS065S, VS-GT100TS065N, and VS-GT200TS065N offer designers a choice of two best in class technologies — low VCE(ON) or low Eoff — to lower conduction or switching losses in high current inverter stages for transportation, energy, and industrial applications.

The half-bridge devices released today combine Trench IGBTs — which deliver improved power savings versus other devices on the market — with Gen IV FRED Pt® anti-parallel diodes with ultra soft reverse recovery characteristics. Offering a new gate pin orientation, the modules’ compact INT-A-PAK package is now 100 % compatible with the 34 mm industry-standard package to offer a mechanical drop-in replacement.

The industrial-level devices will be used in power supply inverters for railway equipment; energy generation, distribution, and storage systems; welding equipment; motor drives; and robotics. To reduce conduction losses in output stages for TIG welding machines, the VS-GT100TS065S, VS-GT150TS065S, and VS-GT200TS065S offer an industry-low collector to emitter voltage of ≤ 1.07 V at +125 °C and rated current. For high frequency power applications, the VS-GT100TS065N and VS-GT200TS065N offer extremely low switching losses, with Eoff down to 1.0 mJ at +125 °C and rated current.

The RoHS-compliant modules feature 650 V collector to emitter voltages, continuous collector current from 100 A to 200 A, and very low junction to case thermal resistance. UL-approved file E78996, the devices can be directly mounted to heatsinks and offer low EMI to reduce snubbing requirements.

Key Specification Table:

Part #

VCES

IC

VCE(ON)

Eoff

Speed

Package

@ IC and +125 °C

VS-GT100TS065S

650 V

100 A

1.02 V

6.5 mJ

DC to 1 kHz

INT-A-PAK

VS-GT150TS065S

650 V

150 A

1.05 V

10.3 mJ

DC to 1 kHz

INT-A-PAK

VS-GT200TS065S

650 V

200 A

1.07 V

13.7 mJ

DC to 1 kHz

INT-A-PAK

VS-GT100TS065N

650 V

100 A

2.12 V

1.0 mJ

8 kHz to 30 kHz

INT-A-PAK

VS-GT200TS065N

650 V

200 A

2.13 V

3.86 mJ

8 kHz to 30 kHz

INT-A-PAK

Samples and production quantities of the new IGBT power modules are available now, with lead times of 15 weeks.

Allegro
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