Navitas Drives Xiaomi’s New Ultrafast-Charging Note 11 Pro+ Smartphone

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Generation 3 GaN power ICs selected to support new ultrafast mobile charging category 

Navitas Semiconductor today announced details of how its gallium nitride (GaN) semiconductors – GaNFast™ power ICs with GaNSense™ technology – are used to ultra-fast-charge Xiaomi’s new Note 11 Pro+ flagship smartphone.

Xiaomi’s advanced power management and leading-edge graphene Li-Ion battery technology allows ultrafast-charging, with a powerful 120W capability to charge the 4,500 mAhr battery from 0-100% in only 17 minutes. GaNSense technology delivers the smallest, most efficient, most portable 120W charger to enable this new-benchmark ultrafast performance.

Gallium nitride (GaN) devices are the leading-edge of power semiconductor technology, operating 20x faster than traditional silicon chips, and can achieve up to 3x more power or 3x faster charging in half the size and weight. Navitas’ GaNFast power ICs integrate GaN power, GaN drive, protection and control. New GaNSense technology delivers another 10% energy savings plus autonomous system-parameter sensing and high-speed protection features for maximum reliability. GaNSense technology enables the GaN power IC to detect and protect in less than 30 ns.

“We have always paid attention to new developments in the industry, and are very happy to cooperate with a company like Navitas that focuses on technological innovation. Using advanced GaN technology to provide more, intelligent products for our Mi fans, our 120W ultra-fast charging technology can go rapidly to the mass market,” said Xiang WANG, President and Partner of Xiaomi Corporation, at the launch of the new phone.

The Xiaomi 120W measures only 55 x 55 x 28.4 mm (86 cc), weighs only 138 g and achieves an industry-leading power density of 1.4 W/cc. Two NV6134 GaNFast power ICs with GaNSense technology are used in the 120W charger; one in the front-end boost power-factor correction (PFC) section, and the other in the downstream high-frequency quasi-resonant (HFQR) DC-DC stage, utilizing a high-speed, low-profile planar transformer.

“This is an incredible new industry development that will re-define the charging experience for consumers globally,” said Charles ZHA, VP and GM of Navitas China. “These ultra-fast chargers require double the GaN content per charger, which of course doubles the revenue opportunity for Navitas. By our estimates, we project this ultra-fast charger category will represent up to half of the GaN potential in mobile chargers over the next few years.”

The worldwide launch of Navitas’ GaNSense technology was held at the China Power Supply Society’s (CPSS) Conference in Shanghai on November 14th. Top academic and industry experts joined the Navitas team in a 3-hour technology seminar, with the event live-streamed to a global audience.

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