All posts tagged "SiC"
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202Electronics ComponentNavitas Introduces Isolated Through-HolePackage for SiCMOSFETs
Direct-cooled thermal management offered by a reflow-compatible, isolated thermal pad significantly improves power density, reliability, and efficiency. Integrated aluminum nitride substrate-based isolation...
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347Top 10 NewsSemiQ to Showcase SiC Power Solutions for Next-Gen Renewable Energy Systems and AI Datacenters
See the QSiC™Gen3 line, now offering high-thermal-performance options featuring AlN substrates and pre-applied TIM, on display at Booth #110 in Hall 4A...
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254Top 10 NewsNavitas to Showcase Breakthrough GaN and SiC Based Solutions
Highlights include two SST solutions for converting the MV grid to 800V HV DC,a 10 kW, 800V-to-50V DC-DC full-brick platform, along with...
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284Electronics ComponentNew Vishay Intertechnology Space-Grade Common Mode Choke Provides EMI Filtering
Surface-Mount Device Features a Robust Nanocrystalline Core and Overmolded, Ruggedized Construction for Reliable Performance in Harsh Environments Vishay Intertechnology, Inc. (NYSE: VSH)...
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324Electronics ComponentSemiQ to Debut SiC Power Solutions for Next-Gen AI Datacenters and High-Power Infrastructure at APEC 2026
QSiC™Gen3 line featuring 1200V SOT-227, S3 half-bridge, B2T1 six-pack and B3 full-bridge packages on display at Booth #1451 SemiQ Inc, a designer,...
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355Electronics ComponentSemiQ Launches Gen3 1200 V S3 Modules with Record Current Density
Family includes 608 A half-bridge module with 2.4 mΩ RDSon and best-in-class thermal resistance SemiQ Inc, a designer, developer, and global supplier...
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368Top 10 NewsNavitas, Cyient Semiconductors enter into a strategic partnership
Navitas Semiconductor Corporation (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors and...
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459Electronics ComponentNew Littelfuse Gate Driver Simplifies SiC and IGBT Designs with Integrated Adjustable Negative Bias
First-in-industry low-side gate driver with adjustable negative gate drive bias offers safer operation, reduced component count, and increased power density for EV...
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597Top 10 NewsNavitas Supports 800 VDC Power Architecture for NVIDIA’s Next-Generation AI Factory Computing Platforms
Navitas unveils new 100 V GaN FETs, alongside 650 V GaN and high voltage SiC devices, purpose-built for NVIDIA’s 800 VDC AI...
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977ArticleNew Paradigms in Component Selection for Power Electronics, EVs, and IoT
As electronic product architectures diversify, engineers are encountering unprecedented challenges in component selection. Today’s designs must not only meet demanding technical criteria...
