ROHM has developed the latest device of its EcoSiC™ series: the 5thGenerationSiC MOSFETs optimized for high‑efficiency power applications. This technology is ideally...
ROHM has begun mass production of theSCT40xxDLLseries of SiC MOSFETs in TOLL (TO-Leadless) packages. Compared to conventional packages (TO-263-7L) with equivalent voltage...
Each year, Nexperia adds about 800 new product types to its range. In 2024, more than 70 new parts for analogue and...
ROHM and Schaeffler, a leading German automotive supplier, have started mass production of a new high-voltage inverter brick equipped with ROHM’s SiC...
Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has been a pioneer in the market introduction of silicon carbide (SiC) power devices...
AEC-Q101-qualified SMD devices combine unmatched thermal stability and easy assembly Nexperia today announced a range of highly efficient and robust automotive-qualified silicon...
TSPAK devices with top-side cooling enable higher efficiency, increased power density, reduced EMI and extended reliability in automotive, renewable energy and high-power...
Includes public debuts for AEC-Q101 qualified 1200 V Gen3 and 1700 V SiC families – on display at booth #1348. SemiQ Inc,...
Optimizing power stage design needs adaptable gate drive solutions for evolving technologies like Si, SiC, and GaN. This paper highlights the benefits...
World-leading performance over temperature enables cool-running, fast-switching 650 V and 1,200 VSiCMOSFETs to support up to 3x more powerful AI data centers...