GaN-Based HWLLC Converter Topology Sets New Power Density and Peak Efficiency Benchmarks for Next-Generation Computing Devices, Power Tools and e-Bikes Renesas Electronics...
Surface-Mount Device Features a Robust Nanocrystalline Core and Overmolded, Ruggedized Construction for Reliable Performance in Harsh Environments Vishay Intertechnology, Inc. (NYSE: VSH)...
The latest GeneSiC™ 5th Generation Trench-Assisted Planar (TAP) SiC MOSFET technology delivers significant improvements in performance, reliability, and robustness for AI data...
Navitas Semiconductor Corporation (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors and...
Navitas unveils new 100 V GaN FETs, alongside 650 V GaN and high voltage SiC devices, purpose-built for NVIDIA’s 800 VDC AI...
As electronic product architectures diversify, engineers are encountering unprecedented challenges in component selection. Today’s designs must not only meet demanding technical criteria...
ROHM Co., Ltd. (ROHM) announced today that ROHM and TSMC have entered a strategic partnership on development and volume production of gallium...
Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon...
Using the most advanced GaN manufacturing technology available today, Aizu, Japan, is now the company’s second factory to produce a complete portfolio...
Controllers improve power efficiency and also reduce standby power consumption Nexperia today introduced a new series of AC/DC flyback controllers as the...