ROHM Semiconductor Europe will return to electronica 2026, taking place from 10 to 13 November 2026 in Munich, Germany. Visitors can meet...
New 100V E-mode GaN Advanced Power Transistor Family Delivers Higher Power Density and Industry-Leading Figure-of-Merit Performance Renesas Electronics Corporation (TSE:6723), a premier...
Solution combines digital power control, GaN technology, and hardware-based security to accelerate development of high-efficiency rack power systemsbased on the 800V DC...
Joint evaluation of GaN and SiC technologies aims to unlock higher efficiency and more compact power electronics for automotive applications. Nexperia* today...
ROHM will exhibit at electronica India 2026, South Asia’s leading trade fair for electronic components, systems, applications, and solutions, from September 16th...
Market Summary According to latest research by Growth Market Reports, the global Gallium Nitride (GaN) Epiwafers for Power Electronics market size reached USD 2.21 billion...
Direct-cooled thermal management offered by a reflow-compatible, isolated thermal pad significantly improves power density, reliability, and efficiency. Integrated aluminum nitride substrate-based isolation...
Highlights include two SST solutions for converting the MV grid to 800V HV DC,a 10 kW, 800V-to-50V DC-DC full-brick platform, along with...
GaN-Based HWLLC Converter Topology Sets New Power Density and Peak Efficiency Benchmarks for Next-Generation Computing Devices, Power Tools and e-Bikes Renesas Electronics...