ROHM will exhibit at electronica India 2026, South Asia’s leading trade fair for electronic components, systems, applications, and solutions, from September 16th...
Market Summary According to latest research by Growth Market Reports, the global Gallium Nitride (GaN) Epiwafers for Power Electronics market size reached USD 2.21 billion...
Direct-cooled thermal management offered by a reflow-compatible, isolated thermal pad significantly improves power density, reliability, and efficiency. Integrated aluminum nitride substrate-based isolation...
Highlights include two SST solutions for converting the MV grid to 800V HV DC,a 10 kW, 800V-to-50V DC-DC full-brick platform, along with...
GaN-Based HWLLC Converter Topology Sets New Power Density and Peak Efficiency Benchmarks for Next-Generation Computing Devices, Power Tools and e-Bikes Renesas Electronics...
Surface-Mount Device Features a Robust Nanocrystalline Core and Overmolded, Ruggedized Construction for Reliable Performance in Harsh Environments Vishay Intertechnology, Inc. (NYSE: VSH)...
The latest GeneSiC™ 5th Generation Trench-Assisted Planar (TAP) SiC MOSFET technology delivers significant improvements in performance, reliability, and robustness for AI data...
Navitas Semiconductor Corporation (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors and...
Navitas unveils new 100 V GaN FETs, alongside 650 V GaN and high voltage SiC devices, purpose-built for NVIDIA’s 800 VDC AI...