- Product and system highlights include the latest industry –leading AI data center solutions, including a 10kW ‘GaN-powered’ 800V-50V brick, ultra-high voltage SiC, SiCPAK™ modules, and 650V & 100V GaNFast™ power devices.
- Three Industry sessions covering reliability in SiC, GaN ICs for 800 VDC AI data center,and single-stage power converter enabled by bi-directional GaN ICs
Navitas Semiconductor (Nasdaq: NVTS), a leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, will exhibit its latest innovations for AI data centers, performance computing, energy and grid infrastructure, and industrial electrification at APEC 2026 (booth #2027) in San Antonio, Texas from March 22-26.
At the event, Navitaswill unveil the 10 kW ‘GaN-powered’ 800 V–to–50 V DC-DC platform that employs advanced 650 V and 100 V GaNFast FETs in a three-level half-bridge architecture with synchronous rectification to deliver 98.5% peak efficiency.This full-brick package design platform achieves 2.1 kW/in³ power density andalso supports + / – 400 VDC standard for AI datacenters.Additionally, Navitas will feature a12 kW AI data center power supply,which leveragesIntelliWeave™ digital control to achieve unmatched efficiency, power density, and performance, along with an8.5 kW OCP power supply and 4.5 kW CRPS power supply.
For next-generation solid-state transformer (SST) applications demanding industry-leading efficiency—exceeding 98% conversion from medium-voltage grids (13.8 kVAC to 34.5 kVAC) to 800 VDC or 1500 VDC for AI data centers and advanced energy infrastructure—Navitas will showcase its latest SiCPAK™ power modules. The portfolio features ultra-high-voltage (UHV) 3300 V and 2300 V solutions, along with 1200 V high-voltage options, delivering breakthrough performance, scalability, and reliability for mission-critical power systems. The newly released gate driver evaluation board for dynamic characterization of UHV SiCPAK™ power modules will also be on display.
Advancing the future of AI-enabled high-performance computing, Navitas will debut ultra-compact 240W and 300W power solutions built on its latest GaNFast™ IC innovations for superior efficiency and power density. Navitas will also showcase high-efficiency GaN-based motor control solutions ranging from 400W to 1kW for advanced industrial applications.
Navitas Speaking Sessions at APEC 2026
March 24 | 8:55–9:20 AM CT | Location: IS01.2
Maximizing MVHV SiC Performance and Reliability with Advanced Power Device and Packaging Technologies for Mission-Critical Energy Infrastructure Applications
Presenter: Sumit Jadav, Navitas Semiconductor
March 25 | 11:05–11:30 AM CT| Location: IS07.6
High-Power GaN ICs Deliver Leading Efficiency and Power Density in 800 V AI Data Center DC-DC Brick Solutions
Presenter: Llew Vaughan-Edmunds, Vice President & GM, GaN Business Unit
March 26 | 11:35–11:50 AM CT | Location: IS27.4
Single-stage Power Converter Enabled by GaN Bidirectional Switches
Presenter: Llew Vaughan-Edmunds, Vice President & GM, GaN Business Unit
Visit us at our booth #2027. For further information on the Navitas APEC 2026 presence, please visit our event page.
To schedule a meeting with Navitas at APEC 2026, please contact your Navitas representative or write toinfo@navitassemi.com.
