QSiC Power Modules are tested beyond 1400 V and target battery chargers, photovoltaic inverters, server power supplies and energy storage systems.
SemiQ Inc, a designer, developer, and global supplier of superior silicon carbide (SiC) solutions for ultra-efficient, high-performance, and high-voltage applications, has expanded its family of 1200 V Gen3 SiC MOSFETs, launching fiveSOT-227 modules that offer RDSon values of 7.4, 14.5, and 34 mΩ. SemiQ’s GCMS modules, which feature Schottky Barrier Diodes(SBDs),have lower switching losses at high temperature, especially compared to non-SBDs GCMX modules.
The devices target medium-voltage, high-power conversion applications, including battery chargers, photovoltaic inverters, server power supplies, and energy storage systems. All parts are screened using wafer-level gate-oxide burn-in tests exceeding 1400 V and are avalanche tested to 800 mJ(330 mJfor 34 mΩ modules).
All modules are highly rugged, easy to mount, and feature an isolated backplate as well as direct mounts for a heat sink. They have been engineered to enhance performance and switching speeds while minimizing losses in such applications. The 7.4 mΩ GCMX007C120S1-E1 reduces switching losses to 4.66 mJ (3.72 mJTurn on, 0.94 mJTurn off) and has a body diode reverse recovery charge of 593 nC.
Their junction-to-case thermal resistance ranges from 0.23°C/W for the 7.4 mΩ MOSFET module to 0.70°C/W for the 34 mΩMOSFET module.
Dr. Timothy Han, President at SemiQ said: “The expansion of our third-generation1200 V SiC MOSFET family marks another key milestone in SemiQ’s mission to deliver superior silicon carbide solutions for high-performance power applications. By broadening our portfolio with lower resistance options and rugged, easy-to-mount SOT-227 packages, we’re empowering designers to achieve higher efficiency, faster switching, and greater reliability across a wide range of energy and industrial systems.”
| Part Numbers | Packages | Ratings | RDSon | |
| GCMX007C120S1-E1 | SOT-227 | 1200 V | 192 A | 7.4 mΩ |
| GCMS007C120S1-E1 | SOT-227 | 1200 V | 189 A | 7.3 mΩ |
| GCMX014C120S1-E1 | SOT-227 | 1200 V | 104 A | 14.5 mΩ |
| GCMS014C120S1-E1 | SOT-227 | 1200 V | 103 A | 15 mΩ |
| GCMX034C120S1-E1 | SOT-227 | 1200 V | 51 A | 34 mΩ |
| GCMS034C120S1-E1 | SOT-227 | 1200 V | 53 A | 34 mΩ |
For further information and specifications on the Gen3 SOT-227modules, please visit SemiQ.com. Samples and volume pricing are available upon request.









