Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has been a pioneer in the market introduction of silicon carbide (SiC) power devices...
AEC-Q101-qualified SMD devices combine unmatched thermal stability and easy assembly Nexperia today announced a range of highly efficient and robust automotive-qualified silicon...
TSPAK devices with top-side cooling enable higher efficiency, increased power density, reduced EMI and extended reliability in automotive, renewable energy and high-power...
Includes public debuts for AEC-Q101 qualified 1200 V Gen3 and 1700 V SiC families – on display at booth #1348. SemiQ Inc,...
Optimizing power stage design needs adaptable gate drive solutions for evolving technologies like Si, SiC, and GaN. This paper highlights the benefits...
World-leading performance over temperature enables cool-running, fast-switching 650 V and 1,200 VSiCMOSFETs to support up to 3x more powerful AI data centers...
Navitas’ GeneSiC silicon carbide (SiC) MOSFETs simplify design, expand market size for 4.6 kW KATEK solar inverters Navitas Semiconductor (Nasdaq: NVTS), and...
The New Gate Driver IC Supports 1200V Power Devices with 3.75kVrms in Isolation Voltage Renesas Electronics Corporation (TSE: 6723), a premier supplier...
Lucid Air – EV AC Charging ‘Powered By ROHM’ ROHM Semiconductor has announced that Lucid, an advanced luxury electric vehicle company headquartered...
700 Volt (V) MOSFETs and 700 V and 1200 V Schottky Barrier Diodes (SBDs) extend customer options as demand grows for SiC...