ROHM has developed an isolated gate driver IC – theBM6GD11BFJ-LB. It is designed specifically for driving 600V-class high-voltage GaN HEMTs. When combined...
Class-leading* unit of nanoseconds gate drive contributes to greater energy savings and miniaturization in LiDAR applications and data centers ROHM has developed...
Greater energy savings and miniaturization in power supply applications by combining GaN devices and Control ICs ROHM’s ultra-high-speed Control IC technology maximizes...