Cornell University engineers team along with University of Notre Dame and also the semiconductor company IQE have created a Galliun Nitride (GaN) power diodes that are basically capable of serving as a building foundation blocks of the GaN power switches . this will be used in applications such as electronics products and other electricity distribution infrastructure.
This is rapidly approaching its performance speed and limits the electronics and the material GaN will explore the potential replacements that will be silicon switches. But with many of the features GaN is one of the notorious material that has defect and reliability issues. Thus right now the team is focusing on the device based GaN record low concentrations.