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Spin transfer MRAM demonstrated on standard CMOS wafer

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 ST-MRAM architecture  is the new path  to memory tevhnologies such as flash DRAM and SRAM. This is a prototype of the MRAM that was pruch as flash, DRAM and SRAM, supporting h.igh speed and non volatile storage.
It will be used in many applications such as mobile devices, data storing systems and many more.
STT says that it could be the orthogonal spin technology MRAM  thus can be called OST MRAM.

Barry Hoberman, CEO of STT, said: “This demonstration of memory is critically important and a new pavement.”

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