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SiC MOSFET offers ‘revolutionary’ performance

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Described by the word Revolutionary infineon has provided a new technology that is claim to achieve unattainable levels of power density and performance by there CoolsiC silicon carbide MOSFET Technology. Underdesk new 1200 volt LIC most paid they will be trying to optimise the reliability along with performance over some benchmark losses of 1200 volt Silicon ITBT that will be supporting applications related to emerging technology on the uninterrupted power supply for storage systems , inverter and further development in industrial tries.

 

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